EC4408C

www.DataSheet.co.kr Ordering number : ENA0529 EC4408C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4408C Features General-Purpose Switching Device Applications 4V drive. Halogen Free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on glass epoxy substrate (145mm✕80mm✕1.6mm) Conditions Ratings 60 ±20 200 800 0.15 150 --55 to +150 Unit V V mA mA W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=100μA VDS=10V, ID=100mA ID=100mA, VGS=10V ID=50mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 1.2 140 240 1.8 2.6 27 8.6 4.4 2.4 3.7 Ratings min 60 1 ±10 2.6 typ max Unit V μA μA V mS Ω Ω pF pF pF Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (...