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BAT54-V, BAT54A-V, BAT54C-V, BAT54S-V
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
Features
• These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
BAT54-V
3
BAT54A-V
3
Top View
1 2 1 2
Mechanical Data
Case: SOT-23 Weight: approx. 8.8 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box
BAT54C-V
3
BAT54S-V
3
Top View
1
18034
2
1
2
Parts Table
Part BAT54-V BAT54A-V BAT54C-V BAT54S-V Ordering code BAT54-V-GS18 or BAT54-V-GS08
Type marking L4 L42 L43 L44
Remarks Tape and reel Tape and reel Tape and reel Tape and reel
BAT54A-V-GS18 or BAT54A-V-GS08 BAT54C-V-GS18 or BAT54C-V-GS08 BAT54S-V-GS18 or BAT54S-V-GS08
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Repetitive peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current current Power dissipation Note 1) Device on fiberglass substrate, see layout on next page. tp < 1 s Test condition Symbol VRRM IF IFRM IFSM Ptot Value 30 200 1) 300 1) 600 1) 230 Unit V mA mA mA mW
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Note 1) Device on fiberglass substrate, see layout on next page. Document Number 85508 Rev. 1.7, 16-Jul-10 For technical questions within your region, please contact one of the following:
[email protected],
[email protected],
[email protected] www.vishay.com 1
Datasheet pdf - http://www.DataSheet4U.net/
Test condition
Symbol RthJA Tj Tstg
Value 430
1)
Unit K/W °C °C
125 - 65 to + 150
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BAT54-V, BAT54A-V, BAT54C-V, BAT54S-V
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Reverse Breakdown voltage Leakage current Test condition IR = 100 µA (pulsed) Pulse test tp < 300 µs, δ < 2 % at VR = 25 V IF = 0.1 mA, tp < 300 µs, δ < 2 % IF = 1 mA, tp < 300 µs, δ < 2 % Forward voltage IF = 10 mA, tp < 300 µs, δ < 2 % IF = 30 mA, tp < 300 µs, δ < 2 % IF = 100 mA, tp < 300 µs, δ < 2 % Diode capacitance Reverse recovery time VR = 1 V, f = 1 MHz IF = 10 mA to IR = 10 mA, iR = 1 mA, RL = 100 Ω Symbol V(BR) IR VF VF VF VF VF CD trr Min. 30 2 240 320 400 500 800 10 5 Typ. Max. Unit V µA mV mV mV mV mV pF ns
Layout for RthJA test
Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.)
7.5 (0.3) 3 (0.12)
1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03)
2 (0.8) 1 (0.4) 2 (0.8)
5 (0.2)
1.5 (0.06) 5.1 (0.2)
17451
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000 I F - Forward Current (mA) 100 10 1 0.1 0.01 0
18867
14 T j = 125 °C - 40 °C C D - Typical Capacitanc.