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50C02CH Dataheets PDF



Part Number 50C02CH
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel MOSFET
Datasheet 50C02CH Datasheet50C02CH Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENN7515 50C02CH NPN Epitaxial Planar Silicon Transistor 50C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2150A [50C02CH] Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features • • • 1 1.9 2 0.6 • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniatur.

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www.DataSheet.co.kr Ordering number : ENN7515 50C02CH NPN Epitaxial Planar Silicon Transistor 50C02CH Low-Frequency General-Purpose Amplifier Applications Applications • Package Dimensions unit : mm 2150A [50C02CH] Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit. Features • • • 1 1.9 2 0.6 • Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron). 0.4 3 0.6 0.05 1.6 2.8 0.7 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 60 50 5 500 1.0 700 150 --55 to +150 Unit V V V mA A mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=10V, IC=50mA 300 500 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA Marking : CX 0.2 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Bussiness Headquaters SANYO Electric Semiconductor Co.,Ltd. Semiconductor Company http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TOKYO OFFICE Tokyo Bldg., 1-10, 11 Chome, Taito-ku, TOKYO, 110-8534 JAPAN 52703 TS IM TA-100151 No.7515-1/4 Datasheet pdf - http://www.DataSheet4U.net/ 0.2 2.9 0.15 www.DataSheet.co.kr 50C02CH Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 50 5 30 340 55 Ratings min typ 2.8 50 0.9 100 1.2 max Unit pF mV V V V V ns ns ns Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB RL + 220µF + 470µF VCC=25V VBE= --5V IC=20IB1= --20IB2=200mA 500 IC -- VCE A A 1 5m 600 IC -- VBE VCE=2V 450 7mA Collector Current, IC -- mA 30mA 350 300 250 200 150 100 50 0 0 3mA Collector Current, IC -- mA 20m 400 10m A 8mA 5mA 500 400 2mA 1mA 600µA 200µA 300 °C 25°C 200 100 IB=0 100 200 300 400 500 600 700 800 900 1000 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05107 Collector-to-Emitter Voltage, VCE -- mV 1000 7 5 3 2 IT05106 3 Ta=75°C hFE -- IC Base-to-Emitter Voltage, VBE -- V VCE(sat) -- IC Ta=7 5 --25°C IC / IB=10 2 3 VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 25°C --25°C DC Current Gain, hFE 100 100 7 5 3 2 2 10 7 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05108 5 1.0 2 3 5 7 10 2 3 --2 5 7 100 5° C 3 25 °C Ta = 5 75 °C 7 5 7 1000 IT05411 Collector Current, IC -- mA Collector Current, IC -- mA No.7515-2/4 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 50C02CH 3 VCE(sat) -- IC IC / IB=20 1000 7 VCE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 5 3 2 100 7 5 Ta =7 5° C °C --2 5 25 °C 100 7 5 3 2 °C 25 = Ta 75 °C --2 C 5° 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05109 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05110 Collector Current, IC -- mA 10 7 VBE(sat) -- IC Collector Current, IC -- mA 10 Cob -- VCB f=1MHz IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 2 Output Capacitance, Cob -- pF 2 3 5 7 1000 IT05111 5 7 5 1.0 7 5 3 2 25°C Ta= --25°C 3 75°C 2 0.1 1.0 2 3 5 7 10 2 3 5 7 100 1.0 1.0 2 3 5.


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