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Ordering number : ENN7515
50C02CH
NPN Epitaxial Planar Silicon Transistor
50C02CH
Low-Frequency General-Purpose Amplifier Applications
Applications
•
Package Dimensions
unit : mm 2150A
[50C02CH]
Low-frequency Amplifer, high-speed switching, small motor drive, muting circuit.
Features
• •
•
1 1.9
2
0.6
•
Large current capacitance. Low collector-to-emitter saturation voltage (resistance). RCE(sat) typ=175mΩ [IC=0.5A, IB=50mA]. Ultrasmall package facilitates miniaturization in end products. Small ON-resistance (Ron).
0.4 3
0.6
0.05
1.6
2.8
0.7 0.9
1 : Base 2 : Emitter 3 : Collector SANYO : CPH3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 60 50 5 500 1.0 700 150 --55 to +150 Unit V V V mA A mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=10mA VCE=10V, IC=50mA 300 500 Conditions Ratings min typ max 100 100 800 MHz Unit nA nA
Marking : CX
0.2
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Bussiness Headquaters SANYO Electric Semiconductor Co.,Ltd. Semiconductor Company
http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, Chome, Ueno, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TOKYO OFFICE Tokyo Bldg., 1-10, 11 Chome, Taito-ku, TOKYO, 110-8534 JAPAN
52703 TS IM TA-100151 No.7515-1/4
Datasheet pdf - http://www.DataSheet4U.net/
0.2
2.9
0.15
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50C02CH
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=100mA, IB=10mA IC=100mA, IB=10mA IC=10µA, IE=0 IC=1mA, RBE=∞ IE=10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 50 5 30 340 55 Ratings min typ 2.8 50 0.9 100 1.2 max Unit pF mV V V V V ns ns ns
Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω RB
RL
+ 220µF
+ 470µF VCC=25V
VBE= --5V
IC=20IB1= --20IB2=200mA
500
IC -- VCE
A A 1 5m
600
IC -- VBE
VCE=2V
450
7mA
Collector Current, IC -- mA
30mA
350 300 250 200 150 100 50 0 0
3mA
Collector Current, IC -- mA
20m
400
10m
A
8mA
5mA
500
400
2mA
1mA 600µA
200µA
300
°C 25°C
200
100
IB=0
100 200 300 400 500 600 700 800 900 1000
0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT05107
Collector-to-Emitter Voltage, VCE -- mV
1000 7 5 3 2
IT05106 3
Ta=75°C
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
Ta=7 5
--25°C
IC / IB=10
2 3
VCE=2V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2
25°C --25°C
DC Current Gain, hFE
100
100 7 5 3 2
2
10 7
10 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT05108
5 1.0
2
3
5 7 10
2
3
--2
5 7 100
5° C
3
25
°C
Ta =
5
75 °C
7
5 7 1000 IT05411
Collector Current, IC -- mA
Collector Current, IC -- mA
No.7515-2/4
Datasheet pdf - http://www.DataSheet4U.net/
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50C02CH
3
VCE(sat) -- IC
IC / IB=20
1000 7
VCE(sat) -- IC
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
2
5 3 2
100 7 5
Ta =7 5° C °C
--2 5
25
°C
100 7 5 3 2
°C 25
= Ta
75
°C
--2
C 5°
3 2
10 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT05109
10 1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000 IT05110
Collector Current, IC -- mA
10 7
VBE(sat) -- IC
Collector Current, IC -- mA
10
Cob -- VCB
f=1MHz
IC / IB=20
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
3 2
Output Capacitance, Cob -- pF
2 3 5 7 1000 IT05111
5
7
5
1.0 7 5 3 2
25°C
Ta= --25°C
3
75°C
2
0.1 1.0
2
3
5 7 10
2
3
5 7 100
1.0 1.0
2
3
5.