FM25L256

www.DataSheet.co.kr Pre-Production FM25L256 256Kb FRAM Serial 3V Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits Unlimited Read/Write Cycles 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 25 MHz Frequency Direct Hardware Replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme Hardware Protection Software Protection Low Power Consumption Low Voltage Operation 2.7V – 3.6V 1 µA (typ) Standby Current Industry Standard Configurations Industrial Temperature -40°C to +85°C 8-pin SOIC and 8-pin DFN Packages “Green” Packaging Options Description The FM25L256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25L256 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. The next bus cycle may start immediately. In addition, the product offers virtually unlimited write endurance. Also, FRAM exhibits much lower power consumption than EEPROM. These capabilities make the FM25L...