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FM25C160B Dataheets PDF



Part Number FM25C160B
Manufacturers Ramtron
Logo Ramtron
Description 5V F-RAM Memory
Datasheet FM25C160B DatasheetFM25C160B Datasheet (PDF)

www.DataSheet.co.kr Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz maximum Bus Frequency • Direct hardware replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme • Hardware .

  FM25C160B   FM25C160B


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www.DataSheet.co.kr Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz maximum Bus Frequency • Direct hardware replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • 250 µA Active Current (1 MHz) • 4 µA (typ.) Standby Current Industry Standard Configuration • Industrial Temperature -40° C to +85° C • 8-pin “Green”/RoHS SOIC (-G) Description The FM25C160B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25C160B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM25C160B is capable of supporting up to 1012 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM25C160B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25C160B provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The FM25C160B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration CS SO WP VSS 1 2 3 4 8 7 6 5 VDD HOLD SCK SI Pin Name /CS /WP /HOLD SCK SI SO VDD VSS Function Chip Select Write Protect Hold Serial Clock Serial Data Input Serial Data Output 5V Ground Ordering Information FM25C160B-G FM25C160B-GTR “Green” 8-pin SOIC “Green” 8-pin SOIC, Tape & Reel This is a product that has fixed target specifications but are subject to change pending characterization results. Rev. 1.2 Mar. 2011 Ramtron International Corporation 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-F-RAM, (719) 481-7000 www.ramtron.com Page 1 of 13 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FM25C160B - 16Kb 5V SPI F-RAM WP CS HOLD SCK Instruction Decode Clock Generator Control Logic Write Protect 256 x 64 FRAM Array Instruction Register Address Register Counter SI 11 8 Data I/O Register 3 Nonvolatile Status Register SO Figure 1. Block Diagram Pin Description Pin Name /CS I/O Input Pin Description Chip Select: This active low input activates the device. When high, the device enters low-power standby mode, ignores other inputs, and all outputs are tri-stated. When low, the device internally activates the SCK signal. A falling edge on /CS must occur prior to every op-code. Serial Clock: All I/O activity is synchronized to the serial clock. Inputs are latched on the rising edge and outputs occur on the falling edge. Since the device is static, the clock frequency may be any value between 0 and 20 MHz and may be interrupted at any time. Hold: The /HOLD pin is used when the host CPU must interrupt a memory operation for another task. When /HOLD is low, the current operation is suspended. The device ignores any transition on SCK or /CS. All transitions on /HOLD must occur while SCK is low. Write Protect: This active low pin prevents write operations to the status register. This is critical since other write protection features are controlled through the status register. A complete explanation of write protection is provided on page 6. *Note that the function of /WP is different from the FM25160. Serial Input: All data is input to the device on this pin. The pin is sampled on the rising edge of SCK and is ignored at other times. It should always be driven to a valid logic level to meet IDD specifications. * SI may be connected to SO for a single pin data interface. Serial Output. SO is the data output pin. It is driven actively during a read and remains tri-state at all other times including when /HOLD is low. Data transitions are driven on the falling edge of the serial clock. * SO may be connected to SI for a single pin data interface. Supply Voltage. 5V Ground SCK Input /HOLD Input /WP Input SI Input SO Output VDD VSS Supply Supply Rev. 1.2 Mar. 2011 Page 2 of 13 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FM25C160B - 16Kb 5V SPI F-RAM Overview Th.


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