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FM25040B Dataheets PDF



Part Number FM25040B
Manufacturers Ramtron
Logo Ramtron
Description 4Kb Serial 5V F-RAM Memory
Datasheet FM25040B DatasheetFM25040B Datasheet (PDF)

www.DataSheet.co.kr Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz maximum Bus Frequency • Direct hardware replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme • Hardware Prote.

  FM25040B   FM25040B



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www.DataSheet.co.kr Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion (1012) Read/Writes • 38 year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz maximum Bus Frequency • Direct hardware replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • 250 µA Active Current (1 MHz) • 4 µA (typ.) Standby Current Industry Standard Configuration • Industrial Temperature -40° C to +85° C • 8-pin “Green”/RoHS SOIC (-G) Description The FM25040B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25040B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM25040B is capable of supporting up to 1012 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM25040B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25040B provides substantial benefits to users of serial EEPROM, in a hardware drop-in replacement. The FM25040B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration CS SO WP VSS 1 2 3 4 8 7 6 5 VDD HOLD SCK SI Pin Names /CS /WP /HOLD SCK SI SO VDD VSS Function Chip Select Write Protect Hold Serial Clock Serial Data Input Serial Data Output Supply Voltage 5V Ground Ordering Information FM25040B-G “Green” 8-pin SOIC FM25040B-GTR “Green” 8-pin SOIC, Tape & Reel This is a product that has fixed target specifications but are subject to change pending characterization results. Rev. 1.2 Feb. 2011 Ramtron International Corporation 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-F-RAM, (719) 481-7000 www.ramtron.com Page 1 of 13 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FM25040B - 4Kb 5V SPI F-RAM WP CS HOLD SCK Instruction Decode Clock Generator Control Logic Write Protect 64 x 64 FRAM Array Instruction Register Address Register Counter SI 9 8 Data I/O Register 2 Nonvolatile Status Register SO Figure.


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