FM24C04C

www.DataSheet.co.kr Preliminary FM24C04C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM  Organized as 512 x 8 bits  High Endurance 1012 Read/Writes  36 Year Data Retention at +75C  NoDelay™ Writes  Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface  Up to 1 MHz maximum bus frequency  Direct hardware replacement for EEPROM  Supports legacy timing for 100 kHz & 400 kHz Low Power Operation  5V operation  100 A Active Current (100 kHz)  4 A (typ.) Standby Current Industry Standard Configuration  Industrial Temperature -40 C to +85 C  8-pin “Green”/RoHS SOIC (-G) Description The FM24C04C is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 36 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C04C performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM24C04C is capable of supporting 1012 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM24C04C ideal for nonvolatile memory applications requiring fr...