FM16W08

www.DataSheet.co.kr Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 38 year Data Retention (@ +75C) NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Superior to BBSRAM Modules No Battery Concerns Monolithic Reliability True Surface Mount Solution, No Rework Steps Superior for Moisture, Shock, and Vibration Resistant to Negative Voltage Undershoots SRAM & EEPROM Compatible JEDEC 8Kx8 SRAM & EEPROM pinout 70 ns Access Time 130 ns Cycle Time Low Power Operation Wide Voltage Operation 2.7V to 5.5V 12 mA Active Current 20 µA (typ.) Standby Current Industry Standard Configuration Industrial Temperature -40° C to +85° C 28-pin “Green”/RoHS SOIC Package Description The FM16W08 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 38 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make F-RAM superior to other types of nonvolatile memory. In-system operation of the FM16W08 is very similar to other RAM devices. Minimum read- and writecycle times are equal. The F-RAM memory, however, is nonvolatile due to its unique ferroel...