DatasheetsPDF.com

FDMB2307NZ

Fairchild Semiconductor

Dual Common Drain N-Channel MOSFET

www.DataSheet.co.kr FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET FDMB2307NZ Dual Common Drain N-Channel ...


Fairchild Semiconductor

FDMB2307NZ

File Download Download FDMB2307NZ Datasheet


Description
www.DataSheet.co.kr FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET 20 V, 9.7 A, 16.5 mΩ Features „ Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A „ Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A „ Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A „ Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A „ Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm „ HBM ESD protection level > 2 kV (Note 3) „ RoHS Compliant October 2011 General Description This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on). Application „ Li-Ion Battery Pack Pin 1 Pin 1 S1 S1 G1 G2 D1/D2 S2 S2 4 5 3 G1 2 1 S1 S1 6 S2 Top S2 G2 Bottom MLP 2x3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VS1S2 VGS IS1S2 PD TJ, TSTG Parameter Source1 to Source2 Voltage Gate to Source Voltage Source1 to Source2 Current Power Dissipation Power Dissipation -Continuous -Pulsed TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25°C (Note 4) (Note 1a) Ratings 20 ±12 9.7 40 2.2 0.8 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)