Dual Common Drain N-Channel MOSFET
www.DataSheet.co.kr
FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET
FDMB2307NZ
Dual Common Drain N-Channel ...
Description
www.DataSheet.co.kr
FDMB2307NZ Dual Common Drain N-Channel PowerTrench® MOSFET
FDMB2307NZ
Dual Common Drain N-Channel PowerTrench® MOSFET
20 V, 9.7 A, 16.5 mΩ
Features
Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm HBM ESD protection level > 2 kV (Note 3) RoHS Compliant
October 2011
General Description
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art MicroFET Leadframe, the FDMB2307NZ minimizes both PCB space and rS1S2(on).
Application
Li-Ion Battery Pack
Pin 1
Pin 1
S1
S1
G1
G2 D1/D2 S2 S2
4 5
3
G1
2 1
S1 S1
6
S2 Top
S2
G2
Bottom
MLP 2x3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VS1S2 VGS IS1S2 PD TJ, TSTG Parameter Source1 to Source2 Voltage Gate to Source Voltage Source1 to Source2 Current Power Dissipation Power Dissipation -Continuous -Pulsed TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25°C (Note 4) (Note 1a) Ratings 20 ±12 9.7 40 2.2 0.8 -55 to +150 Units V V A W °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJ...
Similar Datasheet