DatasheetsPDF.com

MRFE6VP6300HSR3

Part Number	MRFE6VP6300HSR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Dec 11, 2011
Detailed Description	www.DataSheet.co.kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Fiel...
Datasheet	MRFE6VP6300HSR3 PDF File

Overview

www.
DataSheet.
co.
kr Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev.
1, 7/2011 RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.
They are unmatched input and output designs allowing wide frequency range utilization, between 1.
8 and 600 MHz.
• Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (100 μsec, 20% Duty Cycle) CW Pout (W) 300 Peak 300 Avg.
f (MHz) 230 130 Gps (dB) 26.
5 25.
0 ηD (%) 74.
0 80.
0 IRL (dB) --16 ...

Similar Datasheet

MRFE6VP6300HSR3 RF Power Field Effect Transistors - Freescale Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)