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MRFE6VP61K25HR6

Freescale Semiconductor

RF Power LDMOS Transistors


Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output des...



Freescale Semiconductor

MRFE6VP61K25HR6

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