Naina Semiconductor emiconductor Ltd.
Thyristor – Diode Module
Features
• • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package
100 100NTD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms Maximum I t for fusing @ t = 10ms
2
Symbol IF(AV) IF(RMS) IFSM It
2
Values 100 220 2000 20
Units A A A kA s
2
M1 & M2 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 65 to +125 +1 1.1
0
Units
0
C
C/W
Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
Maximum average on-state current Maximum repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage required to trigger Holding current range Maximum latching current Critical rate of rise of off-state voltage RMS isolated voltage
Symbol
IT(max) VRRM VFM IGT VGT IH IL dv/dt VISO
Values
100 200 to 1600 1.55 100 2 5 to 100 400 300 2500
Units
A V V A V mA mA V/µs V
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120
[email protected] • www.nainasemi.com
Naina Semiconductor emiconductor Ltd.
100 100NTD
ALL DIMENSIONS IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120
[email protected] • www.nainasemi.com
.