40NTD

Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 40NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 40 100 1000 5000 Units A A A As 2 M1 PACKAGE Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 65 to +125 +1 0.7 0 Units 0 C C/W Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Maximum average on-state current Maximum repetitive peak reverse voltage range Forward voltage drop Gate current required to trigger Gate voltage required to trigger Holding current range Maximum latching current Critical rate of rise of off-state voltage RMS isolated voltage Symbol IT(max) VRRM VFM IGT VGT IH IL dv/dt VISO Values 40 200 to 1600 1.25 100 2 5 to 100 300 300 2500 Units A V V A V mA mA V/µs V 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 4205450 Fax: 0120-4273653 0120 [email protected] www.nainasemi.com Naina Semiconductor emiconductor Ltd. 40NTD ALL DIMENSIONS ARE IN MM Diode Configuration 2 D-95, Sec...