Naina Semiconductor emiconductor Ltd.
Diode – Diode Module
Features
• • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
130NDD
Maximum Ratings (TA = 250C unless otherwise noted)
Parameter Maximum average forward 0 current @ TJ = 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It
2
Values 130 204 3600 53
Units A A A kA s
2
M2 PACKAGE
Thermal & Mechanical Specifications (TA = 250C unless otherwise noted)
Parameter Operating junction temperature range Thermal resistance, junction to case Symbol TJ Rth(JC) Values -65 - to +125 0.2
0
Units
0
C
C/W
Electrical Characteristics (TA = 25OC unless otherwise noted)
Parameter Maximum average on-state current, 180 C sinusoidal Maximum repetitive peak reverse voltage range Forward voltage drop RMS isolation voltage
0
Symbol IT(max) VRRM VFM VISO
Values 130 200 to 1600 1.35 2500
Units A V V V
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120
[email protected] • www.nainasemi.com
Naina Semiconductor emiconductor Ltd.
130NDD
ALL DIMENSIONS ARE IN MM
Diode Configuration
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 4205450 • Fax: 0120-4273653 0120
[email protected] • www.nainasemi.com
.