IN6391

www.DataSheet.co.kr Naina Semiconductor emiconductor Ltd. Schottky Barrier Rectifier Diode Features Fast Switching Low forward voltage drop, VF Guard ring protection High surge capacity High efficiency, low power loss 1N6391 Electrical Ratings (TC = 250C, unless otherwise noted) Parameter Repetitive peak reverse voltage DC blocking voltage Non-repetitive peak reverse voltage Average rectified forward current 0 (TC = 85 C) Non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 Hz Symbol VRRM 45 VDC VRSM IF(AV) 54 25 V A DO-203AA 203AA (DO-4) (DO Values Units V IFSM 600 A Maximum Ratings (TC = 250C, unless otherwise noted) Parameter Maximum instantaneous forward voltage Test Conditions IF = 5 A IF = 50 A TC = 125 C Maximum instantaneous reverse current at rated DC voltage TC = 100 C O O Symbol VF Values 0.44 0.78 40 Units V V mA mA IR 400 Thermal & Mechanical Specifications (TE = 250C, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg W Values 2.0 -65 to +125 -65 to +125 15 45.6 Units 0 C/W 0 C 0 C in-lb g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 4205450 Fax: 0120-4273653 0120 [email protected] www.nainasemi.com Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Naina Semiconductor emico...