SSM9960GH

SSM9960(G)H,J www.DataSheet.co.kr N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching G D BV DSS R DS(ON) ID 40V 16mΩ 42A S Description The SSM9960H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM9960J in TO-251, is available for low-footprint vertical G D S TO-252 (H) This device is available with Pb-free lead finish (second-level interconnect) as SSM9960GH or SSM9960GJ. G D S TO-251 (J) Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 40 ± 20 42 26 195 45 0.36 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Unit °C/W °C/W 11/16/2004 Rev.2.1 www.SiliconStandard.com 1 of 5 www.DataSheet.co.kr SSM9960(G)H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.032 Max. Units 16 2...