High Power Switching Applications Hammer Drive / Pulse Motor Drive and Inductive Load Switching
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MP4104
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistor...
www.DataSheet.co.kr
MP4104
TOSHIBA Power
Transistor Module Silicon
NPN Epitaxial Type (Four Darlington Power
Transistors in One)
MP4104
High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
Industrial Applications Unit: mm
Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) High collector current: IC (DC) = 4 A (max) High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 120 100 6 4 6 0.5 2.0 Unit V V V A A W
JEDEC JEITA TOSHIBA
― ― 2-25A1A
Weight: 2.1 g (typ.)
PT Tj Tstg
4.0 150 −55 to 150
W °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Metho...