V58C2256164SC

www.DataSheet.co.kr V58C2256(804/404/164)SC*I 256 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B DDR400 Clock Cycle Time (tCK2) Clock Cycle Time (tCK2.5) Clock Cycle Time (tCK3) System Frequency (fCK max) 7.5 ns 5ns 5ns 200 MHz 5 DDR400 7.5 ns 6ns 5ns 200 MHz 6 DDR333 7.5 ns 6 ns 6 ns 166 MHz 7 DDR266 7.5ns 7ns 7 ns 143 MHz Features ■ High speed data transfer rates with system frequency up to 200 MHz ■ Data Mask for Write Control ■ Four Banks controlled by BA0 & BA1 ■ Programmable CAS Latency: 2, 2.5, 3 ■ Programmable Wrap Sequence: Sequential or Interleave ■ Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type ■ Automatic and Controlled Precharge Command ■ Power Down Mode ■ Auto Refresh and Self Refresh ■ Refresh Interval: 8192 cycles/64 ms ■ Available in 66-pin 400 mil TSOP or 60 Ball FBGA ■ SSTL-2 Compatible I/Os ■ Double Data Rate (DDR) ■ Bidirectional Data Strobe (DQS) for input and output data, active on both edges ■ On-Chip DLL aligns DQ and DQs transitions with CK transitions ■ Differential clock inputs CK and CK ■ Power Supply 2.5V ± 0.2V ■ Power Supply 2.6V ± 0.1V for DDR400 ■ tRAS lockout supported ■ Concurrent auto precharge option is supported ■ Industrial Temperature (TA): -40C to +85C *Note: (-5B) Supports PC3200 module with 2.5-3-3 timing (-5) Supports PC3200 module with 3-3-3 timing (-6) Supports PC2700 module with 2.5-3-3 timing (-7) Supports PC2100...