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IPI47N10S-33 IPP47N10S-33, IPB47N10S-33
Feature
SIPMOS =Power-Transistor
Product Summary VDS RD...
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IPI47N10S-33 IPP47N10S-33, IPB47N10S-33
Feature
SIPMOS =Power-
Transistor
Product Summary VDS RDS(on) ID
P-TO262-3-1 P-TO263-3-2
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
Green package (lead free)
100 33 47
P-TO220-3-1
V m A
Type IPP47N10S-33 IPB47N10S-33 IPI47N10S-33
Package
Ordering Code
Marking N1033 N1033 N1033
PG-TO220-3-1 SP0002-25706 PG-TO263-3-2 SP0002-25702 PG-TO262-3-1 SP0002-25703
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 47 33
Unit A
Pulsed drain current
TC=25°C
ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg
Page 1
188 400 17.5 6 ±20 175 -55... +175 55/175/56 kV/µs V W °C mJ
Avalanche energy, single pulse
ID =47 A , VDD =25V, RGS =25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS =47A, VDS =0V, di/dt=200A/µs
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
2006-02-14
Datasheet pdf - http://www.DataSheet4U.net/
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IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
Symbol min. RthJC RthJA RthJA -
Values typ. max. 0.85 62 62 40
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise...
