A1357

www.DataSheet.co.kr 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) High power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −35 −20 −8 −5 −8 −1 1.5 10 150 −55 to 150 A Unit V V V JEDEC JEITA TOSHIBA ― ― 2-8H1A A W °C °C Weight: 0.82 g (typ.) Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated ...