GT30J122

www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) Unit: mm ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 100 75 150 −55~150 Unit V V A W °C °C JEDEC JEITA ― ― TOSHIBA 2-16F1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 5.8 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-01 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GT30J122 MARKING TOSHIBA GT30J122 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. ELECT...