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BTS7904S Dataheets PDF



Part Number BTS7904S
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS -T PN Half Bridge
Datasheet BTS7904S DatasheetBTS7904S Datasheet (PDF)

www.DataSheet.co.kr BTS7904S OptiMOS® -T PN Half Bridge Product Summary P V DS -30 13 -40 N 55 12 40 V mΩ A Features • Dual p- and n-channel MOSFET • Automotive AEC Q101 qualified • Green package (RoHS compliant) • Ultra low R DS(on) • 150 °C operating temperature R DS(on),max ID PG-TO220-5-13 Type BTS7904S Package PG-TO220-5-13 Marking 7904S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions P Continuous drain current1) ID T C=25 °C T C=100 °C Pulsed.

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www.DataSheet.co.kr BTS7904S OptiMOS® -T PN Half Bridge Product Summary P V DS -30 13 -40 N 55 12 40 V mΩ A Features • Dual p- and n-channel MOSFET • Automotive AEC Q101 qualified • Green package (RoHS compliant) • Ultra low R DS(on) • 150 °C operating temperature R DS(on),max ID PG-TO220-5-13 Type BTS7904S Package PG-TO220-5-13 Marking 7904S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions P Continuous drain current1) ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS IAS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=±20 A -40 -40 -160 350 -40 -16 / +5 96 -55 ... 150 55/150/56 Value N 40 40 160 200 40 +16 / -163) 69 mJ A V W °C A Unit 1.0 page 1 2008-07-08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr BTS7904S Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction case SMD version, device on PCB5) P R thJC N R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)DSS V GS=0 V, I D=-1 mA N Gate threshold voltage P V GS(th) N Zero gate voltage drain current P I DSS V GS=0 V, I D=1 mA V DS=V GS, I D=-70 µA V DS=V GS, I D=40 µA V DS=-18 V, V GS=0 V, T j=25 °C V DS=-18 V, V GS=0 V, T j=125 °C N V DS=18 V, V GS=0 V, T j=25 °C V DS=18 V, V GS=0 V, T j=125 °C Gate-source leakage current P I GSS N Drain-source on-state resistance P R DS(on) N P N V GS=-16 V, V DS=0 V V GS=16 V, V DS=0 V V GS=-10 V, I D=-20 A V GS=10 V, I D=20 A V GS=-4.5 V, I D=-12.5 A V GS=4.5 V, I D=20 A -30 55 -1 1.2 -1.5 1.7 -0.01 -2.1 2.2 -1 µA V 1.3 1.8 62 45 K/W Values typ. max. Unit - -1 -100 - 0.01 1 - 1 -10 1 7.2 9.7 17.5 16.8 100 -100 100 13 12 21 20.5 mΩ nA 1.0 page 2 2008-07-08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr BTS7904S Parameter Symbol Conditions min. Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance P Crss N Turn-on delay time P t d(on) N Rise time P tr N Turn-off delay time P t d(off) N Fall time P tf N Gate Charge Characteristics2) Gate to source charge Gate to drain charge Switching charge Gate plateau voltage Gate to source charge Gate to drain charge Gate charge Gate plateau voltage P Q gs Q gd Qg V plateau N Q gs Q gd Qg V plateau V DD=44 V, I D=40 A, V GS=0 to 10 V V DD=-24 V, I D=-40 A, V GS=0 to - 10 V -12 -30 -80 -3.0 20 32 82 4.2 -16 -45 -121 27 48 123 nC V DD=15 V, V GS=10 V N: I D=30 A, R G=2 Ω P: I D=-30 A, R G=2 Ω V GS=0 V, V DS=±25 V, f =1 MHz 3900 4600 1000 570 850 550 22 15 94 77 104 31 150 8 5200 6100 1300 760 1300 820 ns pF Values typ. max. Unit 1.0 page 3 2008-07-08 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr BTS7904S Paramet.


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