www.DataSheet.co.kr
Ordering number:ENN5613
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1973/2SC5310
DC/DC Conver...
www.DataSheet.co.kr
Ordering number:ENN5613
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SA1973/2SC5310
DC/DC Converter Applications
Features
· Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitates miniaturization in end products.
Package Dimensions
unit:mm 2018B
[2SA1973/2SC5310]
0.5
0.4 3 0.16
0 to 0.1
0.5
1
0.95 0.95 2 1.9 2.9
1.5
2.5
Specifications
( ) : 2SA1973 Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Mounted on a glass-epoxy board (20×30×1.6mm)
1 : Base 2 : Emitter 3 : Collector SANYO : CP
Conditions
0.8 1.1
Ratings (–)30 (–)25 (–)6 (–)1 (–)3 (–)200 250 150 –55 to +150
Unit V V V A A mA mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=(–)20V, IE=0 VEB=(–)3V, IC=0 VCE=(–)2V, IC=(–)100mA 135* Conditions Ratings min typ max (–)0.1 (–)0.1 400* Unit µA µA
* : The 2SA1973/2SC5310 are classified by 100mA hFE as follows :
Rank hFE 135 5 to 270 200 6 to 400
Continued on next page.
Marking : 2SA1973 : NS 2SC5310 : NN
Any and all SANYO products described or contained herein do not have specifications that c...
