8 Gbit (1024 M x 8 bit) NAND Flash Memory
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1 Preliminary H27U8G8T2B Series 8 Gbit (1024 M x 8 bit) NAND Flash
8 Gb NAND Flash H27U8G8T2B
Thi...
Description
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1 Preliminary H27U8G8T2B Series 8 Gbit (1024 M x 8 bit) NAND Flash
8 Gb NAND Flash H27U8G8T2B
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.0 / Jul. 2008 1
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1 Preliminary H27U8G8T2B Series 8 Gbit (1024 M x 8 bit) NAND Flash Document Title 8 Gbit (1024 M x 8 bit) NAND Flash Memory
Revision History
Revision No.
0.0 Initial Draft.
History
Draft Date
Jul. 30. 2008
Remark
Preliminary
Rev 0.0 / Jul. 2008
2
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1 Preliminary H27U8G8T2B Series 8 Gbit (1024 M x 8 bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code - 2nd cycle : Device Code - 3rd cycle : Internal chip number, Cell Type, Number of Simultaneously Programmed Pages. - 4th cycle : Page size, Block size, Organization, Spare size - 5th cycle : Multiplane Information
MULTIPLANE ARCHITECTURE
- Array is split into two independent planes. Parallel operations on both planes are available, halving program, read and erase time.
NAND INTERFACE
- x8 bus width. - Address / Data Multiplexing - Pin-out compatibility for all densities
COPY BACK PROGRAM
- Fast Data Copy without external buffer
CHIP ENABLE DO...
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