K3342

www.DataSheet4U.net 2SK3342 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3342 Switching Regulator Applications DC−DC Converter, and Motor Drive Applications l Low drain−source ON resistance l High forward transfer admittance l Low leakage current l Enhancement−mode : RDS (ON) = 0.8 Ω (typ.) : |Yfs| = 4.5 S (typ.) Unit: mm : IDSS = 100 µA (max) (VDS = 250 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 250 250 ±20 4.5 18 20 51 4.5 2.0 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-64 2-7B1B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.25 125 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω, IAR = 4.5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC JEITA TOSHIBA ― ― 2-7J1B ...