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Transistors with built-in Resistor
UNR32AE
Silicon NPN epitaxial planar type
For digital circuits ...
www.DataSheet4U.net
Transistors with built-in Resistor
UNR32AE
Silicon
NPN epitaxial planar type
For digital circuits Features
Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption
0.23+0.05 –0.02 0.33+0.05 –0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05 –0.02
Unit: mm
(0.40) (0.40) 0.80±0.05 1.20±0.05 5°
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO IC PT Tj Tstg
Rating 50 50 80 100 125 –55 to +125
Unit V V mA mW °C °C
1: Base 2: Emitter 3: Collector
0.15 min.
Absolute Maximum Ratings Ta = 25°C
1
2
0 to 0.01
0.52±0.03
5°
SSSMini3-F1 Package
Marking Symbol: KC Internal Connection
R1 (47 kΩ) R2 (22 kΩ) C
B
E
Electrical Characteristics Ta = 25°C±3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R2 fT VCB = 10 V, IE = —2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA I...