IPS050N03LG

Type OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant IPD050N03L G IPS050N03L G IPF050N03L G IPU050N03L G Product Summary VDS RDS(on),max ID 30 V 5 mW 50 A Type IPD050N03L G IPF050N03L G IPS050N03L G IPU050N03L G Package Marking PG-TO252-3-11 050N03L PG-TO252-3-23 050N03L PG-TO251-3-11 050N03L PG-TO251-3-21 050N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 Rev. 2.0 I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5...