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H50N03E

Hi-Sincerity Mocroelectronics
Part Number H50N03E
Manufacturer Hi-Sincerity Mocroelectronics
Description N-Channel MOSFET
Features • RDS(on)=11mΩ@VGS=10V, ID=30A • RDS(on)=18mΩ@VGS=4.5V, ID=30A • Advanced trench process technology • High Density Cell ...
Published Aug 30, 2011
Datasheet PDF File H50N03E PDF File


H50N03E
H50N03E

Features

• RDS(on)=11mΩ@VGS=10V, ID=30A
• RDS(on)=18mΩ@VGS=4.5V, ID=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Vol...


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