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SSM452

SeCoS

P-Channel Enhancement Mode Power MOSFET

www.DataSheet4U.net SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET R...


SeCoS

SSM452

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www.DataSheet4U.net SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSM452 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. FEATURES    Simple Drive Requirement Lower On-resistance Fast Switching SOT-223 A M 4 Top View CB 1 2 3 MARKING  Drain K E L D F G H J  Gate REF. A B C D E F  Source Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL Drain – Source Voltage Gate – Source Voltage Continuous Drain Current 3 1 RATING -30 ±20 -6.0 -4.8 -20 2.7 0.02 -55 ~ 150 45 UNIT V V A A A W W / °C °C °C / W VDS VGS TA = 25°C TA = 70°C ID IDM PD TJ, TSTG Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Maximum Junction–Ambient 3 THERMAL DATA RθJA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 24-Jun-2010 Rev. A Page 1 of 4 www.DataSheet4U.net SSM452 Elektronische Bauelemente -6 A, -30V, RDS(ON) 55mΩ P-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coef...




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