SSM4507M

www.DataSheet4U.net SSM4507M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Lower gate charge Fast switching performance D2 D1 D2 D1 D1 D1 D2 D2 N-Ch BV DSS 30V 36mΩ 6.0A -30V 72mΩ -4.2A R DS(ON) G2 G2 S2 G1 S2 S1 G1 S1 P-Ch SO-8 Description Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low-voltage applications such as DC/DC converters. G1 ID BV DSS R DS(ON) ID D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25°C ID@TA=70°C IDM PD@TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 6 4.8 20 2.0 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -4.2 -3.4 -20 Units V V A A A W W/°C °C °C Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit °C/W Rev.1.01 4/06/2004 www.SiliconStandard.com 1 of 7 www.DataSheet4U.net SSM4507M N-channel Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ....