SSM4502GM

www.DataSheet4U.net SSM4502GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D2 D1 D1 G2 N-CH BVDSS RDS(ON) ID S2 G1 20V 18mΩ 8.3A -20V 45mΩ -5A Simple Drive Requirement Low Gate Charge Fast Switching Performance P-CH BVDSS RDS(ON) ID SO-8 S1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widly preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 D2 Pb-free; RoHS-compliant G1 S1 G2 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 20 ±12 8.3 6.5 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -20 ±12 -5 -4 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit ℃/W 02/13/2008 Rev.1.00 www.SiliconStandard.com 1 www.DataSheet4U.net SSM4502GM N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, I...