SSM4501GSD

www.DataSheet4U.net SSM4501GSD N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D2 D2 D1 D1 N-CH BVDSS RDS(ON) ID G2 30V 27mΩ 7A -30V 49mΩ -5A Simple Drive Requirement Low On-resistance Fast Switching Characteristic P-CH BVDSS RDS(ON) ID PDIP-8 S2 G1 S1 DESCRIPTION The advanced power MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 G1 Pb-free; RoHS-compliant G2 S1 S2 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 40 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5 -4.2 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W 01/28/2008 Rev.1.00 www.SiliconStandard.com 1 www.DataSheet4U.net SSM4501GSD N-CH ELECTRICAL CHARACTERISTICS @TJ=25 C (unless otherwise specified ) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 1 0.03 12 9 2 5 6 5 19 4 645 150 95 27 50 3 1 25 13 800 V V/℃ mΩ mΩ V S uA uA nC nC nC ns ns ns ns pF pF pF Break...