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TC2998E

Transcom
Part Number TC2998E
Manufacturer Transcom
Description GaAs Power FETs
Published Aug 22, 2011
Detailed Description net - Preliminary Datasheet - TC2998E PRE.1_01/21/2008 2.5-2.7GHz 20W Packaged GaAs Power FETs FEATUR...
Datasheet PDF File TC2998E PDF File

TC2998E
TC2998E

Overview
net - Preliminary Datasheet - TC2998E PRE.
1_01/21/2008 2.
5-2.
7GHz 20W Packaged GaAs Power FETs FEATURES      20 W Typical Power 10.
5 dB Typical Linear Power Gain High Linearity: IP3 = 52 dBm Typical High Power Added Efficiency: Nominal PAE of 37 % 100 % DC and RF Tested DESCRIPTION The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.
The ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for military or commercial applications.
ELECTRICAL SPECIFICATIONS Symbol FREQ P1dB...


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