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TC2997B

Transcom
Part Number TC2997B
Manufacturer Transcom
Description GaAs Power FETs
Published Aug 22, 2011
Detailed Description net TC2997B REV0_20040412 1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20W Typical...
Datasheet PDF File TC2997B PDF File

TC2997B
TC2997B

Overview
net TC2997B REV0_20040412 1.
9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 20W Typical Power at 1.
9 GHz • 12 dB Typical Linear Power Gain at 1.
9 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Lg = 1 µm, Wg = 50 mm • 100 % DC and RF Tested PHOTO ENLARGEMENT • Flange Ceramic Package DESCRIPTION The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent qu...


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