Document
www.DataSheet4U.net
Power Transistors
www.jmnic.com
2SA634
Silicon PNP Transistors
BCE
Features
©q With TO-220 package
Absolute Maximum Ratings Tc=25
SYMBOL VCBO VCEO VEBO IB IC PC Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Base collector current Collector current Collector power dissipation Junction temperature Storage temperature 3.0 10 150 -55~+150 RATING 40 40 5.0 UNIT V V V A A W
TO-220
Electrical Characteristics Tc=25
SYMBOL ICBO IEBO ICEO VCBO VCEO(SUS) VEBO VCE(sat-1) VCE(sat-2) hFE-1 hFE-2 hFE-3 VBE(sat)1 VBE(sat)1 fT Cob PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter cut-off current Collector-base breakdown voltage Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Forward current transfer ratio Base-emitter stauration voltages Base-emitter stauration voltages Transition frepuency Output Capacitance
www.DataSheet4U.net
CONDITIONS VCB=40V; IE=0 VEB=5.0V; IC=0 VCE=40V; IB=0 IC=1mA; IB=0 IE=1mA; Ic=0 IC=3A; IB=0.3A
MIN
TYPE
MAX 200 200 0.5
UNIT uA uA mA V
40 5 1.0
V
IC=1A; VCE=5V
40
IC=3A; IB=0.3A
1.5
V
.