IPD60R950C6

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R950C6 DataSheet Rev.2.5 Final PowerManagement&Multimarket 600V CoolMOS™ C6 Power Transistor IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive Fully qualified according to JEDEC for Industrial Applications Pb-free plating, Halogen free mold compound Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. drain pin 2 gate pin 1 source pin 3 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt 650 0.95 13 12...