IPB60R250CP

IPB60R250CP CoolMOSTM Power Transistor Features Lowest figure-of-merit R ONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.250 Ω 26 nC P-TO263-3 CoolMOS is designed for: Hard switching SMPS topologies Type IPB60R250CP Package P-TO263 Marking 60R250P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=5.2 A, V DD=50 V I D=5.2 A, V DD=50 V Value 12 8 40 345 0.52 5.2 50 ±20 ±30 104 -55 ... 150 W °C A V/ns V mJ Unit A www.DataSheet4U.net Rev. 2.0 page 1 2008-07-11 IPB60R250CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 7.8 40 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering t...