Document
IPB60R199CPA
CoolMOS® Power Transistor
Product Summary V DS R DS(on),max Q g,typ 600 V
0.199 Ω 33 nC
Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications PG-TO263-3
Type IPB60R199CPA
Package PG-TO263-3
Marking 6R199A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1),2) MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating temperature Storage temperature Rev. 2.0 I D,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg page 1 V DS=0...480 V static T C=25 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V Value 16 10 51 436 0.66 6.6 50 ±20 139 -40 ... 150 -40 ... 150 2009-09-01 A V/ns V W °C mJ Unit A
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IPB60R199CPA
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area4) T sold MSL 1 0.9 62 K/W
-
35
-
Soldering temperature, reflow soldering
-
-
245
°C
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=1.1 mA V DS=600 V, V GS=0 V, T j=25 °C V GS=20 V, V DS=0 V V GS=10 V, I D=9.9 A, T j=25 °C V GS=10 V, I D=9.9 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 600 2.5 3 0.18 0.49 2 3.5 1 100 0.199 Ω µA nA Ω V
I DSS I GSS R DS(on)
Rev. 2.0
page 2
2009-09-01
IPB60R199CPA
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance C iss C oss V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=9.9 A, R G=3.3 Ω 1520 72 69 180 10 5 50 5 ns pF Values typ. max. Unit
Effective output capacitance, energy C o(er) related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current
1) 2) 3) 4)
C o(tr) t d(on) tr t d(off) tf
V GS=0 V, V DS=0 V to 480 V
Q gs Q gd Qg V plateau V DD=400 V, I D=9.9 A, V GS=0 to 10 V
-
8 11 32 5.0
43 -
nC
V
V SD t rr Q rr I rrm
V GS=0 V, I F=9.9 A, T j=25 °C
-
0.9 340 5.5 33
1.2 -
V ns µC A
V R=400 V, I F=I S, di F/dt =100 A/µs
-
Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. I SD≤I D, di /dt ≤200A/µs, V DClink=400V, V peak2|I D|R DS(o.