MB81EDS516545

FUJITSU MICROELECTRONICS DATA SHEET DS05-11463-1E MEMORY Consumer FCRAMTM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP MB81EDS516545 ■ DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 536, 870, 912 storages accessible in a 64-bit format. MB81EDS516545 is suited for consumer application requiring high data band width with low power consumption. * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan ■ FEATURES 2 M word × 64 bit × 4 banks organization DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.9 V Junction Temperature: TJ = − 10 °C to + 125 °C 1.8 V-CMOS compatible inputs Unidirectional READ Data Strobe per 2 byte Unidirectional WRITE Data Strobe per 2 byte Burst Length: 2, 4, 8, 16 CAS latency: 2, 3, 4 Clock Stop capability during idle periods Auto Precharge option for each burst access Configurable Driver Strength and Pre Driver Strength Auto Refresh and Self Refresh Modes Deep Power Down Mode Low Power Consumption -IDD4R =330 mA Max @ 3.46 GByte/s -IDD4W =380 mA Max @ 3.46 GByte/s 8 K refresh cycles /16.7 ms (Tj ≤ +125 °C) (Continued) Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8 www.DataSheet4U.net MB81EDS516...