Freescale Semiconductor Technical Data
Document Number: MRF6V13250H Rev. 0, 6/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications. Typical Performance: VDD = 50 Volts, IDQ = 100 mA
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