IDT03S60C

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery/ no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdown voltage tested at 5mA2) Optimized for high temperature operation www.DataSheet4U.net Product Summary V DC Qc IF 600 5 3 V nC A PG-TO220-2-2 thinQ! 2G Diode designed for fast switching applications like: CCM PFC Type IDT03S60C Maximum ratings, Parameter Continuous forward current Symbol Conditions IF T C<120 °C T C<70 °C RMS forward current I F,RMS f =50 Hz T C=25 °C, t p=10 ms T C=150°C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150°C, t p=10 ms Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque V RRM dv/ dt P tot T j, T stg M3 and M3.5 screws T j=25 °C V R = 0….480V T C=25 °C Value 3 4.5 4.2 16 14 10.5 115 1.2 0.96 600 50 25 -55 ... 175 60 V V/ns W °C Mcm A2s Unit A Package PG-TO220-2-2 Marking D03S60C Pin 1 C Pin 2 A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value I F,RM I F,max ∫i 2dt Rev. 2.0 page 1 2007-04-25 IDT03S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Sol...