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IDH12SG60C Dataheets PDF



Part Number IDH12SG60C
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Schottky Diode
Datasheet IDH12SG60C DatasheetIDH12SG60C Datasheet (PDF)

3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< .

  IDH12SG60C   IDH12SG60C


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3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF Product Summary VDC QC IF; TC< 130 °C IDH12SG60C 600 V 19 nC 12 A thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS Type IDH12SG60C Package PG-TO220-2 Marking D12G60C Pin 1 C Pin 2 A Maximum ratings Parameter Symbol Conditions Continuous forward current I F T C<130 °C Surge non-repetitive forward current, I F,SM sine halfwave T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms Non-repetitive peak forward current i ²t v.


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