Document
IDH10S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications
www.DataSheet4U.net
Product Summary V DC Qc IF 600 24 10 V nC A
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDH10S60C Package PG-TO220-2 Marking D10S60C Pin 1 C Pin 2 A
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 84 Unit A
Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Soldering temperature, wavesoldering only allowed at leads Rev. 2.0 T sold I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg
39 350 35 600 A2s V V/ns W °C Mcm °C 2009-06-02
V R = 0….480V T C=25 °C
50 100 -55 ... 175
M3 and M3.5 screws 1.6mm (0.063 in.) from case for 10s page 1
60 260
IDH10S60C
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA leaded 1.5 62 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.14 mA I F=10 A, T j=25 °C I F=10 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C 600 1.5 1.7 1.4 1.7 2.1 140 µA V
V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time3) Total capacitance Qc tc C V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz
-
5
1400
-
24 480 60 60
<10 -
nC ns pF
1) 2) 3)
J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection.
4)
Only capacative charge occuring, guaranteed by design.
Rev. 2.0
page 2
2009-06-02
IDH10S60C
1 Power dissipation P tot=f(T C) parameter: R thJC(max)
100
2 Diode forward current I F=f(T C); T j≤175 °C parameter: R thJC(max); V F(max)
30
80
25
20 60
P tot [W]
I F [A]
40 20 0 25 50 75 100 125 150 175 200
15
10
5
0 25 50 75 100 125 150 175 200
T C [°C]
T C [°C]
3 Typ. forward characteristic I F=f(V F); t p=400 µs parameter: T j
30
100 °C 175°C
4 Typ. forward characteristic in surge current mode I F=f(V F); t p=400 µs; parameter: T j
120
-55 °C
100
25 °C 150 °C
20
80
175°C
I F [A]
I F [A]
60
25 °C
10
40
100 °C
20
150 °C
-55 °C
0 0 1 2 3 4
0 0 2 4 6 8
V F [V]
V F [V]
Rev. 2.0
page 3
2009-06-02
IDH10S60C
5 Typ. forward power dissipation vs. average forward current P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
50
0.1 0.5
6 Typ. reverse current vs. reverse voltage I R=f(V R) parameter: T j
102
40
1
101
0.2
P F(AV) [W]
30
100
I R [µA]
20 10-1
175 °C
150 °C
100 °C -55 °C 25 °C
10
10-2
0 0 5 10 15 20 25
10-3 100
200
300
400
500
600
I F(AV) [A]
V R [V]
7 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 °C, f =1 MHz
600
500
100
0.5
400
Z thJC [K/W]
C [pF]
10-4 10-3 10-2 10-1 100
0.2 0.1
300
10-1
0.02 0.01
200
100
single pulse
10-2 10-5
0 10-1 100 101 102 103
t P [s]
V R [V]
Rev. 2.0
page 4
2009-06-02
IDH10S60C
9 Typ. C stored energy E C=f(V R) 10 Typ. Capacitive charge vs. current slope Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
14
25
12 20 10 15
6
Q c [nC]
10 5 0 0 100 200 300 400 500 600 100 400 700 1000
E c [µC]
8
4
2
0
V R [V]
di F/dt [A/µs]
Rev. 2.0
page 5
2009-06-02
IDH10S60C
PG-TO220-2: Outline
Dimensions in mm/inches Rev. 2.0 page 6 2009-06-02
IDH10S60C
Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual pr.