DatasheetsPDF.com

IDH10S60C Dataheets PDF



Part Number IDH10S60C
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Schottky Diode
Datasheet IDH10S60C DatasheetIDH10S60C Datasheet (PDF)

IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications www.DataSheet4U.net Product Summary V DC Qc IF 600 24 10 V nC A • Breakdown voltage tested at 5mA2) thinQ! 2G Diode special.

  IDH10S60C   IDH10S60C



Document
IDH10S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications www.DataSheet4U.net Product Summary V DC Qc IF 600 24 10 V nC A • Breakdown voltage tested at 5mA2) thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDH10S60C Package PG-TO220-2 Marking D10S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C<140 °C f =50 Hz T C=25 °C, t p=10 ms T j=150 °C, T C=100 °C, D =0.1 T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms Value 10 15 84 Unit A Surge non-repetitive forward current, I F,SM sine halfwave Repetitive peak forward current Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque Soldering temperature, wavesoldering only allowed at leads Rev. 2.0 T sold I F,RM I F,max ∫i 2dt V RRM dv/ dt P tot T j, T stg 39 350 35 600 A2s V V/ns W °C Mcm °C 2009-06-02 V R = 0….480V T C=25 °C 50 100 -55 ... 175 M3 and M3.5 screws 1.6mm (0.063 in.) from case for 10s page 1 60 260 IDH10S60C Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA leaded 1.5 62 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.14 mA I F=10 A, T j=25 °C I F=10 A, T j=150 °C Reverse current IR V R=600 V, T j=25 °C 600 1.5 1.7 1.4 1.7 2.1 140 µA V V R=600 V, T j=150 °C AC characteristics Total capacitive charge Switching time3) Total capacitance Qc tc C V R=400 V, I F≤I F,max, di F/dt =200 A/µs, T j=150 °C V R=1 V, f =1 MHz V R=300 V, f =1 MHz V R=600 V, f =1 MHz - 5 1400 - 24 480 60 60 <10 - nC ns pF 1) 2) 3) J-STD20 and JESD22 All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA. tc is the time constant for the capacitive displacement current waveform (independent from T j, ILOAD and di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier injection. 4) Only capacative charge occuring, guaranteed by design. Rev. 2.0 page 2 2009-06-02 IDH10S60C 1 Power dissipation P tot=f(T C) parameter: R thJC(max) 100 2 Diode forward current I F=f(T C); T j≤175 °C parameter: R thJC(max); V F(max) 30 80 25 20 60 P tot [W] I F [A] 40 20 0 25 50 75 100 125 150 175 200 15 10 5 0 25 50 75 100 125 150 175 200 T C [°C] T C [°C] 3 Typ. forward characteristic I F=f(V F); t p=400 µs parameter: T j 30 100 °C 175°C 4 Typ. forward characteristic in surge current mode I F=f(V F); t p=400 µs; parameter: T j 120 -55 °C 100 25 °C 150 °C 20 80 175°C I F [A] I F [A] 60 25 °C 10 40 100 °C 20 150 °C -55 °C 0 0 1 2 3 4 0 0 2 4 6 8 V F [V] V F [V] Rev. 2.0 page 3 2009-06-02 IDH10S60C 5 Typ. forward power dissipation vs. average forward current P F,AV=f(I F), T C=100 °C, parameter: D =t p/T 50 0.1 0.5 6 Typ. reverse current vs. reverse voltage I R=f(V R) parameter: T j 102 40 1 101 0.2 P F(AV) [W] 30 100 I R [µA] 20 10-1 175 °C 150 °C 100 °C -55 °C 25 °C 10 10-2 0 0 5 10 15 20 25 10-3 100 200 300 400 500 600 I F(AV) [A] V R [V] 7 Transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 8 Typ. capacitance vs. reverse voltage C =f(V R); T C=25 °C, f =1 MHz 600 500 100 0.5 400 Z thJC [K/W] C [pF] 10-4 10-3 10-2 10-1 100 0.2 0.1 300 10-1 0.02 0.01 200 100 single pulse 10-2 10-5 0 10-1 100 101 102 103 t P [s] V R [V] Rev. 2.0 page 4 2009-06-02 IDH10S60C 9 Typ. C stored energy E C=f(V R) 10 Typ. Capacitive charge vs. current slope Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max 14 25 12 20 10 15 6 Q c [nC] 10 5 0 0 100 200 300 400 500 600 100 400 700 1000 E c [µC] 8 4 2 0 V R [V] di F/dt [A/µs] Rev. 2.0 page 5 2009-06-02 IDH10S60C PG-TO220-2: Outline Dimensions in mm/inches Rev. 2.0 page 6 2009-06-02 IDH10S60C Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual pr.


IDH10S120 IDH10S60C IDH10SG60C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)