Document
IDC08S120E
1200V thinQ!TM SiC Schottky Diode
Features: Revolutionary Semiconductor Material Silicon Carbide • Switching Behaviour Benchmark • No Reverse Recovery / No Forward Recovery • Temperature Independent Switching Behaviour www.DataSheet4U.net • Qualified According to JEDEC1) Based on Target Applications • Applications: • • • • Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers
A
C
Chip Type
IDC08S120E
VBR 1200V
IF 7.5A
Die Size 2.012 x 2.012 mm2
Package sawn on foil
Mechanical Parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 2.012 x 2.012 1.476 x 1.476 4.05 362 100 1652 Photoimide 3200 nm Al Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm2
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
IDC08S120E
Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current, limited by Tvjmax Surge non repetitive forward current, sine halfwave Repetitive peak forward current, limited by thermal resistance Rth Non-repetitive peak forward current i 2 t value Operating junction and storage temperature range Symbol VRRM VDC IF IF,SM IF,RM IF,max Tvj < 150°C TC =25° C , tP =10 ms TC =150° C , tP =10 ms TC = 100° C , Tvj = 1 50 ° C , D= 0 . 1 TC =25° C , t P = 1 0µs TC =25° C , tP =10 ms TC =150° C , tP =10 ms Condition T v j =25 °C Value 1200 1200 7.5 39 33 32 160 7 5 -55...+175 A2s °C A Unit V
∫i
2
dt
Tvj , Tstg
Static Characteristics (tested on wafer) Parameter Reverse current Diode forward voltage Symbol IR VF Conditions V R = 12 00 V , Tvj = 2 5 ° C I F = 7 .5 A , Tvj = 2 5 ° C Value min. Typ. 8 1.6 max. 180 1.8 Unit µA V
Static Characteristics (not subject to production test - verified by design / characterization) Parameter Reverse current Diode forward voltage Symbol IR VF Conditions V R = 12 00 V , Tvj = 1 50 ° C I F = 7 .5 A , Tvj = 1 50 ° C Value min. Typ. 30 2.5 max. 1000 3 Unit µA V
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
IDC08S120E
Dynamic Characteristics (not subject to production test - verified by design / characterization) Parameter Total capacitive charge3) Symbol Conditions Value min. Typ. 27 max. Unit
QC
I F <= I F , m a x d i /d t = 200 A/ µ s V R = 12 00 V
Tvj = 1 50°C
nC
Switching time
2)
tc
Tvj = 1 50°C VR=1V 380 30 27
<10
ns
Total capacitance
C
f= 1 MH z
V R = 30 0 V V R = 60 0 V
pF
1) 2)
J-STD20 and JESD22 tc is the time constant for the capacitive displacement current waveform (independent from Tvj = 1 50°C , ILOAD and di/dt), different from trr, which is dependent on Tvj = 15 0°C , ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier inject. 3) Only capacitive charge occurring, guaranteed by design (independent from Tvj, ILOAD and di/dt).
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
IDC08S120E
Chip drawing
A
A: Anode pad
Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009
IDC08S120E
Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved.
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