IDP30E120

Preliminary data IDP30E120 IDB30E120 Product Summary VRRM IF VF Tjmax 1200 30 1.65 150 P-TO220-2-2. Fast Switching EmCon
 Diode Feature
1200 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
Easy paralleling www.DataSheet4U.net V A V °C P-TO220-3.SMD Type IDP30E120 IDB30E120 Package P-TO220-2-2. Ordering Code Q67040-S4390 Marking D30E120 D30E120 Pin 1 C NC PIN 2 A C PIN 3 A P-TO220-3.SMD Q67040-S4383 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current TC=25°C TC=90°C Symbol VRRM IF Value 1200 50 30 Unit V A Surge non repetitive forward current TC=25°C, tp =10 ms, sine halfwave IFSM IFRM Ptot 102 76.5 W 138 66 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation TC=25°C TC=90°C Operating and storage temperature Soldering temperature 1.6mm(0.063 in.) from case for 10s Tj , Tstg TS -55...+150 260 °C °C Page 1 2001-12-12 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) IDP30E120 IDB30E120 Symbol min. RthJC RthJA RthJA - Values typ. 35 max. 0.9 62 62 - Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Reverse leakage current VR =1200V, Tj=25°C VR =1200...