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IDB30E120
Fast Switching Emitter Controlled Diode
Description
Fast Switching Emitter Controlled Diode Feature 1200 V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling * RoHS compliant IDB30E120 Product Summary VRRM 1200 IF VF Tjmax 30 1.65 150 V A V °C PG-TO263-3-2 2 1 3 Type IDB30E120 Package Ordering Code Marking Pin 1 ...
Infineon Technologies
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IDB30E120
Fast Switching Emitter Controlled Diode
- Infineon Technologies
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