OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 17...
OptiMOS®-T2 Power-
Transistor
Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2
Product Summary V DS R DS(on),max (SMD version) ID
40 V 2.4 mW 100 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB100N04S4-H2 IPI100N04S4-H2 IPP100N04S4-H2
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N04H2 4N04H2 4N04H2
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=50A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value 100
100
400 280 100 ±20 115 -5...
