IPP100N04S3-03

www.DataSheet4U.net IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on) (SMD Version) ID 40 2.5 100 V mΩ A Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N04S3-03 IPI100N04S3-03 IPP100N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3PN0403 3PN0403 3PN0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=80 A Value 100 100 400 898 ±20 214 -55 ... +175 55/175/56 mJ V W °C Unit A Rev. 1.0 page 1 2007-05-03 IPB100N04S3-03 IPI100N04S3-03, IPP100N04S3-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V...