Trench IGBT
SEMiX402GAR066HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX402GAR066HDs
Features
• Homogeneous Si • Trench = Trenchgate techn...
Description
SEMiX402GAR066HDs
SEMiX® 2s
Trench IGBT Modules
SEMiX402GAR066HDs
Features
Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature
coefficient UL recognised file no. E63532
Typical Applications*
Matrix Converter Resonant Inverter Current Source Inverter
Remarks
Case temperature limited to TC=125°C max.
Product reliability results are valid for Tj=150°C
For short circuit: Soft RGoff recommended
Take care of over-voltage caused by stray inductance
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint
IC = 400 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
VGE = 15 V
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 6.4 mA
VGE = 0 V VCE = 600 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V Tj = 25 °C
Values
600 502 379 400 800 -20 ... 20
6
-40 ... 175
543 397 400 800 1800 -40 ... 175
566 412 400 ...
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