isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·Good Linearity...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-17
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
200
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1494
isc website: www.iscsemi.com
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA1494
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -200V ; IE= 0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
VEB= -6V; IC= 0 IC= -8A ; VCE= -4V IE= 0 ; VCB= -10V;ftest= 1.0MHz IE= 1A ; VCE= -12V
-200
V
-2.5 V
-100 μA
-100 μA
50
180
500
pF
20
MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
hFE Classifications
Y
P
G
IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC...